Semiconductor device and a method of manufacturing the same

ABSTRACT

A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 10/633,583filed Aug. 5, 2003.

BACKGROUND OF THE INVENTION

This invention relates to a semiconductor device and also to amanufacturing technique thereof. More particularly, the inventionrelates to a semiconductor device having bump electrodes and also to atechnique effective for application to the manufacturing techniquethereof.

With multi-pin semiconductor devices such, for example, as LCD (liquidcrystal display) drivers, a problem is involved in that the chip sizeincreases with an increasing number of electrode pads. This is for thereason that the electrode pad for leading out an electrode of anintegrated circuit within a semiconductor chip cannot be made small insize in comparison with the size reduction of element and wiring in viewof the securing practice for bonding strength, bonding accuracy andstandards on the part of packaging semiconductor chips, so that the chipsize is determined depending on the number and size of electrode pads.To avoid this, with the case of multi-pin semiconductor devices, atechnique or system is now being adopted wherein electrode pads arearranged in a more inner region of a semiconductor chip where elementsand wirings are arranged (i.e. an active region).

It will be noted that semiconductor devices having bump electrodes aredisclosed, for example, in Japanese Patent No. 3022565. In this patent,a technique is disclosed wherein a dummy pattern is arranged belowelectrode pads.

SUMMARY OF THE INVENTION

We have first found that the above-mentioned structure of the typewherein electrode pads are arranged in the active region has thefollowing new problem.

More particularly, because elements and wirings are formed belowelectrode pads and thus, structures provided below electrode pads differfrom one another, the heights of electrode pads within the main surfaceof a semiconductor chip, i.e. the heights of bump electrodes bonded tothe respective electrode pads, become non-uniform even if electrode padsare adjacent to each other or the bump thicknesses are made uniform.This eventually presents a problem that connection failure occursbetween the electrode pads of a semiconductor chip and correspondingwirings of a packaging body for the semiconductor chip.

An object of the invention is to provide a technique wherein the heightsof a plurality of electrode pads within a main surface of asemiconductor chip can be made uniform.

The above and other objects and novel features of the invention willbecome apparent from the following description with reference to theaccompanying drawings.

A typical embodiment of the invention among those embodiments set forthin this application is briefly described below.

According to the invention, a semiconductor device is provided whereinunderlying structures provided below a plurality of electrode padsarranged in a region of a main surface of a semiconductor chip whereelements and wirings are arranged are made uniform.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an essential part of an instance of wiringprovided as an underlying layer of an electrode pad of a semiconductordevice according to one embodiment of the invention;

FIG. 2 is a plan view of an essential part of an instance of wiring, atthe same layer as in FIG. 1, provided as an underlying layer of anelectrode pad of the semiconductor device according to one embodiment ofthe invention;

FIG. 3 is a plan view of an essential part of an instance of wiring, atthe same layer as in FIGS. 1 and 2, provided as an underlying layer ofan electrode pad of the semiconductor device according to one embodimentof the invention;

FIG. 4 is a sectional view, taken along line Y1-Y1 at the wiring of FIG.1;

FIG. 5 is a sectional view of the wiring of FIG. 2, taken along lineY2-Y2 at the wiring of FIG. 2;

FIG. 6 is a sectional view, taken along line Y3-Y3 at the wiring of FIG.3;

FIG. 7 is a plan view of an essential part of an instance of wiring, atthe same layer as in FIGS. 1 to 3, provided as an underlying layer of anelectrode pad of the semiconductor device according to anotherembodiment of the invention;

FIG. 8 is a sectional view, taken along line Y4-Y4 at the wiring of FIG.7;

FIG. 9 is a plan view of an essential part of an instance of a wiring inan underlying layer of an electrode pad of a semiconductor deviceaccording to a further embodiment of the invention;

FIG. 10 is a plan view of an essential part of an instance of a wiringin an underlying layer, which is at the same layer level as in FIG. 9,of the electrode pad of the semiconductor device according to thefurther embodiment of the invention;

FIG. 11 is a plan view of an essential part of an instance of a wiringin an underlying layer, which is at the same layer level as in FIGS. 9and 10, of the electrode pad of the semiconductor device according tothe further embodiment of the invention;

FIG. 12 is a sectional view, taken along line Y5-Y5 at the wiring ofFIG. 9;

FIG. 13 is a sectional view, taken along line Y6-Y6 at the wiring ofFIG. 10;

FIG. 14 is a sectional view, taken along line Y7-Y7 at the wiring ofFIG. 11

FIG. 15 is a plan view of an essential part of an instance of a wiringin an underlying layer of an electrode pad of a semiconductor deviceaccording to a still further embodiment of the invention;

FIG. 16 is a plan view of an essential part of an instance of a wiringin an underlying layer of an electrode pad of a semiconductor deviceaccording to another embodiment of the invention;

FIG. 17 is a plan view of an essential part of an instance of a wiringin an underlying layer of an electrode pad of a semiconductor deviceaccording to yet another embodiment of the invention;

FIG. 18 is a plan view of an essential part of an instance of a wiringin an underlying layer, which is the same layer level as in FIG. 17, ofthe electrode pad of the semiconductor device according to the yetanother embodiment of the invention;

FIG. 19 is a plan view of an essential part of an instance of a wiringin an underlying layer, which is the same layer level as in FIGS. 17 and18, of the electrode pad of the semiconductor device according to theyet another embodiment of the invention;

FIG. 20 is an illustrative view showing the comparison between thetechnique checked by us (not improved) and the technique made accordingto one embodiment of the invention (i.e. an improved technique) withrespect to the occupation rate of the underlying wirings within a padregion;

FIG. 21 is a plan view of an essential part of an instance of asemiconductor substrate in an underlying layer of an electrode pad of asemiconductor device according to another embodiment of the invention;

FIG. 22 is a plan view of an essential part of an instance of asemiconductor substrate in an underlying layer of an electrode pad,which is different from the electrode pad of FIG. 21, of thesemiconductor device according to another embodiment of the invention;

FIG. 23 is a sectional view, taken along line Y8-Y8 at the semiconductorsubstrate of FIG. 21;

FIG. 24 is a sectional view, taken along line Y9-Y9 at the semiconductorsubstrate of FIG. 22;

FIG. 25 is a plan view showing, as a whole, an instance of asemiconductor chip constituting a semiconductor device according to theinvention;

FIG. 26 is a plan view of an instance of a second-layer wiring beneathan electrode pad of the semiconductor device according to anotherembodiment of the invention;

FIG. 27 is a plan view of an instance of a second-layer wiring beneathan electrode pad, different from that of FIG. 26, of the semiconductordevice embodying the invention;

FIG. 28 is a plan view of an instance of a second-layer wiring beneathan electrode pad, different from those of FIGS. 26 and 27, of thesemiconductor device embodying the invention;

FIG. 29 is a plan view of an instance of a second-layer wiring beneathan electrode pad, different from those of FIGS. 26 to 28, of thesemiconductor device embodying the invention;

FIG. 30 is a plan view of an instance of a second-layer wiring beneathan electrode pad, different from those of FIGS. 26 to 29, of thesemiconductor device embodying the invention;

FIG. 31 is a plan view of an instance of a second-layer wiring beneathan electrode pad, different from those of FIGS. 26 to 30, of thesemiconductor device embodying the invention;

FIG. 32 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 26, of thesemiconductor device embodying the invention;

FIG. 33 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 27, of thesemiconductor device embodying the invention;

FIG. 34 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 28, of thesemiconductor device embodying the invention;

FIG. 35 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 29, of thesemiconductor device embodying the invention;

FIG. 36 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 30, of thesemiconductor device embodying the invention;

FIG. 37 is a plan view of an instance of a first-layer wiring beneaththe electrode pad, which is the same as shown in FIG. 31, of thesemiconductor device embodying the invention;

FIG. 38 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 26, of the semiconductor deviceembodying the invention;

FIG. 39 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 27, of the semiconductor deviceembodying the invention;

FIG. 40 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 28, of the semiconductor deviceembodying the invention;

FIG. 41 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 29, of the semiconductor deviceembodying the invention;

FIG. 42 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 30, of the semiconductor deviceembodying the invention;

FIG. 43 is a plan view of an instance of a main surface of asemiconductor substrate in the underlying layer of the electrode pad,which is the same as shown in FIG. 31, of the semiconductor deviceembodying the invention;

FIG. 44 is a sectional view, taken along lines Y10-Y10 of FIGS. 27, 33and 39;

FIG. 45 is a sectional view, taken along lines Y11-Y11 of FIGS. 29, 35and 41;

FIG. 46 is an illustrative view showing wiring occupation rates of therespective wiring layers provided beneath individual electrode pads ofthe semiconductor device shown in FIG. 25;

FIG. 47 is a histogram showing the occupation rate of the first-layerwiring of FIG. 46;

FIG. 48 is a histogram showing the occupation rate of the second-layerwiring of FIG. 46;

FIG. 49 is a plan view of an essential part of a liquid crystal display;

FIG. 50 is a sectional view of the essential part of FIG. 49;

FIG. 51 is an enlarged, sectional view of the essential part of FIG. 50;

FIG. 52 is an enlarged, sectional view of the essential part of FIG. 51;

FIG. 53 is a perspective view of an essential part of TCP according toanother embodiment of the invention;

FIG. 54 is an enlarged, sectional view of the essential part at theinner lead side of TCP of FIG. 53;

FIG. 55 is a sectional view of an essential part in a packaging state ofTCP of FIG. 53 in a liquid crystal display;

FIG. 56 is a sectional view of an essential part in a packaging state ofa semiconductor device, embodying the invention, on a liquid crystaldisplay with COF;

FIG. 57 is a sectional view of T-TF/BGA (CSP) of a fan-out typeaccording to a further embodiment of the invention;

FIG. 58 is a plan view of T-TF/BGA (CSP) of a fan-in type according to astill further embodiment of the invention;

FIG. 59 is a sectional view, taken along line X1-X1 of FIG. 58; and

FIG. 60 is an enlarged, sectional view of an essential part of FIGS. 58and 59.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Although embodiments of the invention are illustrated by division into aplurality of sections or sub-embodiments if expediently necessary, theseare not mutually irrelevant to one another unless otherwise stated. Moreparticularly, one may be in relation with modifications, details,supplemental explanation and the like of part or all of others. In thefollowing embodiments, where reference is made to the number and otherparameters of elements (including the number, numerical value, quantity,range and the like), they should not be cons trued as limiting tospecified values or numbers, respectively, except the case whereotherwise specified or where limited to a specific value apparently inprinciple. That is, those values smaller than or larger than therespective specified values may also be within the scope of theinvention. Moreover, it is as a matter of course that constituentelements (including steps) in the following embodiments are not alwaysessential except the case where otherwise specified or where suchelements are considered to be apparently essential in principle.Likewise, if reference is made to the shape, position, relation and thelike of the constituent elements, then substantially like or similarshapes and the like are also within the scope of the invention exceptthe case where otherwise specified or where such similar shapes shouldnot be apparently included in principle. This is true of theabove-indicated numbers and ranges. Throughout the drawings forillustrating the embodiments of the invention, like reference numeralsindicate like parts or members having a similar function, which are notrepeatedly explained after once having been illustrated. In theaccompanying drawings for illustrating embodiments of the invention,such drawings including plan views may be hatched in some case foreasily viewable purposes. The embodiments of the invention are nowdescribed with reference to the accompanying drawings.

Embodiment 1

This embodiment deals with a semiconductor device having anactive-on-pad arrangement wherein a plurality of electrode pads(hereinafter referred to simply as pad or pads) are arranged in anactive region having a semiconductor chip element or wirings disposedtherein. In this semiconductor device, the structures of underlyinglayers for the plurality of pads are made uniform. More particularly,the occupation rates of the underlying wirings (wiring occupation rates)for the pads arranged within the respective pad regions are made uniformfor every wiring layer. To this end, firstly, a dummy wiring is providedat a region, in which the wiring occupation rate is smaller than thosewiring occupation rates of other pad regions, which is taken from aplurality of pad regions having the same wiring layer. In contrast, aslit or slits are formed in a wiring in a region (i.e. in a region wherepart of a wiring is removed), which has a wiring occupation rate largerthan the wiring occupation rates of other pad regions and is taken fromthe plurality of pad regions having the same wiring layer. Secondly, anactive region is arranged at an underlying layer of all the pads of asemiconductor chip, i.e. pads for integrated circuit and dummy pads.

Initially, an arrangement of the dummy wiring is illustrated. FIGS. 1 to3 are, respectively, a plan view showing an instance of an essentialpart of each of wirings MXa, MXb, MXc, MXd and MXe in a given wiringlayer serving as an underlying layer of pads PD1 to PD3. FIGS. 4 to 6are, respectively, sectional views, taken along lines Y1-Y1, Y2-Y2 andY3-Y3 at the wirings MXa to MXe of FIGS. 1 to 3. The pads PD1 to PD3are, respectively, a portion at which a bump is bonded and are disposedat different positions of the active region of the same semiconductorchip. The pads PD1 to PD3 are equal to one another with respect to theplanar size and shape. The wirings MXa, MXb, MXc and MXd, respectively,indicate a wiring for signal or power supply which is necessary forconstituting an integrated circuit of a semiconductor chip, whereas thewiring MXe indicates a dummy wiring not necessary for the arrangement ofthe integrated circuit of the semiconductor chip. All the wirings MXa toMXe are formed on an insulating film ISa by patterning, for example, ametal film made mainly of aluminium or the like or a built-up conductorfilm made mainly of aluminium or the like and other type of conductorfilm (e.g. a built-up conductor film obtained by depositing a metal filmmade mainly, for example, of titanium (Ti), titanium nitride (TiN),aluminium or the like and a film of titanium nitride in this order)according to photolithographic and etching techniques. The wirings arecovered with an insulating film ISb. As is particularly shown in FIGS. 3and 6, the dummy wiring MXe is arranged in a region which corresponds tothe pad PD3 region and in which any wiring would not be otherwisearranged. In this way, the occupation rate of the underlying wiringwithin the pad PD3 region is so designed as to be equal to theoccupation rates of the underlying wirings within the pads PD1 and PD2shown in FIGS. 1 and 2. This permits the upper levels of the insulatingfilm ISb within the regions of the pads PD1 to PD3 of FIGS. 1 to 3 to beuniform as is particularly shown in FIGS. 4 to 6. Moreover, the upperportions of the underlying insulating films ISb within the regions ofthe pads PD1 to PD3 can be improved with respect to the flatnessthereof.

Although it is assumed that the dummy wiring MXe is provided as a wiringin a floating state which is not electrically connected with any otherwiring, the dummy wiring may be formed by extending part of a wiringnecessary for the arrangement of an integrated circuit (i.e. the wiringMXd in this case) to a region where the arrangement of a dummy wiring isrequired. In this case, although the wiring per se is not a dummywiring, a wiring portion extending, for achieving the purpose of thisembodiment, to a region not inherently required for arrangement ofwiring is taken as a dummy. FIGS. 7 and 8, respectively, show amodification of arrangement of dummy wiring. FIG. 7 is a plan viewshowing an instance of an essential part of a wiring formed at the samelayer level as the wirings shown in FIGS. 1 to 6, and FIG. 8 shows asectional view taken along line Y4-Y4 at the wiring of FIG. 7. A pad PD4indicates a pad which is located in an active region of thesemiconductor chip different from the region where the pads PD1 to PD3of FIGS. 1 to 3 are arranged, with its planar size and shape being sameas those of the pads PD1 to PD3. Wirings MXf and MXg indicate wiringsfor signal or power supply which are necessary for the constitution ofan integrated circuit of the semiconductor chip. Wiring MXh indicates adummy wiring. In this connection, the occupation rates of the underlyingwirings MXf and MXg within the region of the pad PDF are substantiallysame as those illustrated in FIGS. 1 to 3. From the standpoint that theoccupation rates are made uniform, any dummy wiring is not required, andsuch a dummy wiring is not arranged within a region of the pad PD4. Inthis case, the dummy wiring MXh is arranged in the vicinity of an outerperiphery of the pad PD4. If this dummy wiring MXh is not provided, theinsulating film ISb in the vicinity of the outer periphery of the padPD4 is recessed at the upper surface thereof, thereby causing steps tooccur. Because the flat area of a bump bonded with the pad PD4 isslightly larger than that of the pad PD4, the step at the upper surfaceof the insulating film ISb in the vicinity of the outer periphery of thepad PD4 is reflected on the upper surface of the bump electrode. As aresult, the bump is impeded with flatness at the top thereof and maybecome, in some case, lower in height than the tops of other bumps. Toavoid this, the dummy wiring MXh is arranged in the vicinity of theouter periphery of the pad PD4, so that a step can be prevented frombeing formed at the upper surface of the insulating film ISb at theouter periphery of the pad PD4, thereby improving the flatness at theupper surface of the pad PD4 and thus ensuring the height of the padPD4. In this way, the height at the top of the bump bonded with the padPD4 can be mad equal to the height at the top of other bumps. It will benoted that the bumps are, respectively, formed in a uniform thickness.More particularly, a variation in thickness of bumps can besubstantially neglected.

Next, how to arrange the above slits is illustrated. FIGS. 9 to 11 are,respectively, a plan view showing instances of essential parts ofwirings MXi, MXj, MXk and MXm in the same given wiring layer which is anunderlying layer of the pads PD5 to PD7. FIGS. 12 to 14 are,respectively, sectional views, taken along lines Y5-Y5, Y6-Y6 and Y7-7at the wirings MXi, MXj, MXk and MXm of FIGS. 9 to 11. The pads PD5 toPD7 are similar to the pads PD1 to PD3, and are not particularlyillustrated. The wirings MXi, MXj, MXk and MXm, respectively, indicatethose wirings for signal or power supply necessary for arrangement of anintegrated circuit of a semiconductor chip. The materials and formingmethod of these wirings MXi, MXj, MXk and MXm are similar to those ofthe wirings MXa and the like. As is particularly shown in FIGS. 10, 11,13 and 14, a slit SL is formed in part of the wirings MXk and MXm,respectively. The slit or slits SL are formed by removing part of thewiring MXk and MXm. This permits the occupation rates of the underlyingwirings within the pads PD6, PD7 to become equal to the occupation rateof the underlying wiring within the pad PD5 of FIG. 9. In this manner,the heights of the upper surfaces of the underlying insulating film ISbwithin the regions of the pad PD5 to PD7 can be made uniform as shown inFIGS. 12 to 14. In addition, the flatness at the upper portion of theunderlying insulating film ISb within the pad PD5 to PD7 can beimproved. The slit SL may be formed at the center of the wiring MXk asshown in FIG. 10, or may be formed as extending from the outer peripheryof the wiring MXm toward the center as shown in FIG. 11. In thisembodiment, the slit SL of FIGS. 10 and 11 is formed at a position ofthe space between adjacent wirings MXi and MXj of FIG. 9. This allowsthe underlying states of the pads PD5 to PD7 to become more uniform,thereby ensuring a more uniform height and more improved flatness at theupper surface of the underlying insulating film ISb within the regionsof the pads PD5 to PD7.

FIGS. 15 and 16, respectively, show modifications of slit SL. FIG. 15shows an instance wherein each slit SL is bent downwardly at a centralside end of the wiring as viewed in FIG. 15. FIG. 16 shows an instancewherein a plurality of slits SL are formed in parallel to one another asextending in vertical directions (in a lengthwise direction of the padPD6) of FIG. 16. FIGS. 17 to 19 are, respectively, plan views showinginstances of essential parts of underlying wirings MXn, MXp, MXq, MXrand MXs in the same given wiring layer of pads PD8 to PD10. The pads PD8to PD10 are similar to the pads PD1 to PD3, with their illustrationbeing omitted. The wirings MXn, MXp, MXq, MXr and MXs indicate thosewirings for signal or power supply necessary for the arrangement of anintegrated circuit of a semiconductor chip, and the material and formingmethod thereof are similar to those of the wiring MXa and the like. Inthis embodiment, as shown in FIGS. 18 and 19, slit SL is formed byadaptation to a position of space between adjacent wirings of thewirings MXn, MXp and MXq of FIG. 17. In FIG. 19, the slit SL is formedin the form of a frame. It will be noted that the pads PD1 to PD10 maybe those pads for signal or power supply necessary for arrangement of anintegrated circuit of a semiconductor chip, or may be dummy pads whichare not required for the arrangement of the integrated circuit,respectively.

According to this embodiment, the formation of a dummy wiring or slitpermits the occupation rates of the underlying wirings of the padsdisposed within all the regions of the pads in the main surface of thesemiconductor chip to be made uniform for every wiring layer. FIG. 20shows an instance of comparison between the technique tested by us (i.e.a non-improved technique) and the technique of this embodiment (i.e. animproved technique) with respect to the occupation rates of theunderlying wirings within the regions of pads. With the non-improvedtechnique, the respective wiring layers of first-layer wiring M1,second-layer wiring M2 and third-layer wiring M3 have variations inwiring area occupation rate within the respective regions of pads PD1 toPDn. Alternatively, there may be a portion where an active region existsor does not exists in the underlying layer of the respective pads PD1 toPDn. For these reasons, the underlying layers of the pads PD1 to PDn arecaused to be stepped, so that the heights of the pads PD1 to PDn varyfrom one another. In the course of the manufacture of semiconductordevices, an underlying insulating film of wirings is etched back andflattened so as to conveniently carry out, for example, exposure oretching. From the standpoint of exposure or etching, good flatness isobtained at the upper surface of the underlying insulating film. Fromthe standpoint of the heights of the pads PD1 to PDn, there may be somecase where even though such an etching-back treatment as mentioned aboveis effected, the heights of the pad PD1 to PDn greatly vary due to thevariation of the wiring occupation area rate within the regions of thepads PD1 to PDn and also due to the presence or absence of an activeregion. Since the pads PD1 to PDn are arranged in active regions, it isnot possible to adopt a technique wherein a solid wiring is provided inthe underlying layer of the respective pads PD1 to PDn in order toensure the flatness at the upper surface of the underlying insulatingfilm.

In contrast, according to this embodiment (after improvement), therespective wiring layers of the first-layer wiring M1, second-layerwiring M2 and third-layer wiring M3 are so designed as to have a uniformwiring area occupation rate within the regions of the pads PD1 to PDn.An active region is provided beneath all the pads PD1 to PDn. In thisway, the underlying states of a plurality of pads within a main surfaceof the semiconductor chip (within a main surface of a wafer for themanufacturing process of a semiconductor device) can be madesubstantially uniform, under which the heights of the upper surface ofthe plural pads can be made substantially uniform. Thus, the heights atthe tops of the bumps (bump electrodes) bonded with the respective padscan be made substantially uniform. Because the respective pads can beimproved in flatness at the upper surfaces thereof, the flatness at thetops of the thus bonded bumps can also be improved. Accordingly, itbecomes possible to well connect a plurality of pads of a semiconductorchip and a plurality of wirings of a packaging body for packaging thesemiconductor chip via bumps without suffering any inconvenience. It ispreferred that the underlying wirings of the respective pads are soformed as to be equal to one another with respect to the shape, size,pattern arranging position and arranging pitch. Thus, the underlyingstates of a plurality of pads can be further improved and the pluralityof pads are made more uniform with respect to the heights and flatnessat the upper surfaces of the plurality of pads. Eventually, the heightand flatness at the tops of the bumps bonded with the respective padscan be made more uniform.

Thus, according to this embodiment, the underlying states of a pluralityof pads are made uniform so as to make more uniform height and flatnessat the tops of a plurality of pads. This effect is not lost if theuniformity is within a certain range of error with full uniformity beingnot ensured. Preferably, the occupation rate of wirings beneath therespective pads is within an error of about 10%, more preferably withinan error of about 5%, within which the height and flatness at the uppersurfaces of the pads can be made substantially uniform.

In this embodiment, the underlying layers beneath the respective padsare indicated as first-layer wiring M1, second-layer wiring M2 andthird-layer wiring M3, and the wiring occupation rates of the respectivewiring layers should preferably be at 50% or over. This is for thereason that where a number of insulating films are provided below therespective pads, the upper surface is recessed and steps are liable todevelop. Nevertheless, if metal layers which are harder than aninsulating film are formed largely in number, a variation of steps isreduced, with the likelihood that the height and flatness at the uppersurface of the pads are made uniform.

Next, layout of the active regions is illustrated. FIGS. 21 and 22,respectively, show a plan view of an instance of an essential part of anunderlying semiconductor substrate 1S (hereinafter referred to simply assubstrate) of pads PD11 and PD 12. FIGS. 23 and 24 are, respectively,sectional views, taken along lines Y8-Y8 and Y9-Y9 of FIGS. 21 and 22.In FIGS. 21 and 22, the drawings are, respectively, hatched at anisolation portion 2 for easy review. This isolation portion 2 is, forexample, LOCOS (local oxidation of silicon) formed by oxidation of asubstrate 1S or STI (shallow trench isolation) or the like formed byforming a groove in the substrate 1S and burying an insulating film inthe groove, and is thus formed for dielectric isolation of individualactive regions. The pad PD11 is a pad for signal or power supply whichis necessary for constituting an integrated circuit of a semiconductorchip. An active region La, in which a given type of element is formed,is arranged below the pad PD11. On the other hand, pad PD12 is a dummypad which is not required for arrangement of an integrated circuit of asemiconductor chip. In these figures, there is shown an instance wherethe planar size of the dummy pad PD12 is larger than that of the padPD11. An active region Lb is also arranged below the dummy pad PD12.This active region Lb is not provided so as to form a given type ofelement, but is used as an active region for dummy pad which is providedso that a plurality of pads of a semiconductor chip are made uniform atthe upper surface level (i.e. the height of the tops of a plurality ofbumps) as set forth hereinabove. The provision of the active regions asthe underlying layers of all the pads including the dummy pad PD 12renders it easy to make uniform flatness and height at the uppersurfaces of an underlying insulating film for all the pads. Moreparticularly, the underlying state of a plurality of pads can be mademore uniform and thus, the height and flatness of the upper surfaces ofa plurality of pads can be made more uniform. This leads to furtheruniform height and flatness at the tops of the bumps bonded with therespective pads.

Next, a specific application of the semiconductor device according tothis embodiment is described. FIG. 25 is a plan view showing, as awhole, an instance of a semiconductor chip 1C for constituting thesemiconductor device of this embodiment. This semiconductor chip 1C has,for example, a substrate 1S which is formed in an elongated, rectangularshape and also has, on a main surface thereof, a LCD drive circuit fordriving a liquid crystal display (LCD). This LCD driver circuit has thefunction of supplying a voltage to individual pixels of a cell array ofLCD to control the direction of liquid crystal molecules, and has a gatedrive circuit 3, a source drive circuit 4, a liquid crystal drivecircuit 5, a graphic RAM (random access memory) 6 and a peripheralcircuit 7. In the vicinity of the outer periphery of the semiconductorchip 1C, there are arranged the plural pads PD at given intervals alongthe outer periphery of the semiconductor chips 1C. These plural pads PDare provided on the active region where elements and wirings of thesemiconductor chips are arranged. These plural pads PD includes pads forintegrated circuit necessary for constituting an integrated circuit anddummy pads not necessary for the constituting an integrated circuit. Thepads PD are arranged in a zigzag form in the vicinity of one long sideand two short of the semiconductor chip 1C. The plural pads arranged inthe zigzag form are made mainly of those for gate output signal andsource output signal. More particularly, the plural pads, which havebeen arranged in a zigzag form at the center of the long side of thesemiconductor chip 1C are for source output signal, and the plural pads,which have been arranged in a zigzag form along both short sides of thesemiconductor chip 1C are for gate output signal. Such a zigzagarrangement permits a large number of pads required for gate and sourceoutput signals to be arranged while suppressing the semiconductor chip1C from increasing in size. More particularly, the chip size can bereduced, and the number of pads (pins) can be increased. A plurality ofpads PD arranged in parallel to one another, not in a zigzag form, inthe vicinity of the other long side of the semiconductor chip 1C arethose pads for digital or analog input signal. In the vicinity of thefour corners of the semiconductor chip 1C, pads PD having a relativelylarge planar size are arranged. This relatively large-sized PD padindicates a corner dummy pad. The relative small pad PD has a planarsize, for example, of about 35 μm×50 μm. The planar size of therelatively large-sized pad PD (corner dummy pad) is, for example, atabout 80 μm×80 μm. The pitch of the adjacent pitch is, for example, atabout 30 μm to 50 μm. The total number of the pads PD is, for example,at about 800.

Next, the state of the underlying layer of the pads PD in thesemiconductor device according to this embodiment is described withreference to FIGS. 26 to 45. In these figures, a semiconductor devicehaving a three-layered wiring structure is exemplified. FIGS. 26 to 31are, respectively, a plan view showing an instance of an essential partof wiring Mw in a second wiring layer beneath pads PD13 to PD18 (PD),and FIGS. 32 to 37 are, respectively, a plan view showing an instance ofan essential part of a wiring M1 in a first wiring layer serving as anunderlying layer of the same pads PD13 to PD18 as in FIGS. 26 to 31.FIGS. 38 to 43 are, respectively, a plan view of an instance of anessential part of a main surface of a substrate serving as an underlyinglayer of the same pads PD13 to PD18 as in FIGS. 26 to 31. FIG. 44 is asectional view, taken along line Y10-Y10 of FIGS. 27, 33 and 39, andFIG. 45 is a sectional view, taken along line Y11-Y-11 of FIGS. 29, 35and 39. The pads PD12, PD14 are, for example, those pads PD for gateoutput signal. The pad PD13 indicates a pad provided at an outer side(i.e. at a side nearer to the outer periphery of the semiconductor chip1C) among those pads arranged in the zigzag form. The pad PD14 indicatesa pad provided at an inner side (i.e. at a side nearer to the center ofthe semiconductor chip 1C) among those zigzag pads. The pad PD15 is apad PD, for example, for source output signal, and indicates an innerside pad among the zigzag pads. The pad PD16 indicates, for example, acorner dummy pad. The pads PD17, PD18, respectively, indicate a pad PDfor analog input signal, for example. It will be noted that although thepads PD13 to PD18 which are part of all the pads are indicated only forillustration, the embodiment of the invention can be applied to all thepads in practice. For easy review of the drawings, the first-layerwiring M1, the second-layer wiring M2 and the isolation portion 2 aredepicted as being hatched.

The second-layer wirings M2 provided beneath the pads PD13 to PD18 areillustrated with reference to FIGS. 26 to 31. The second-layer wiringsM2 beneath the pads PD13 to PD18 are formed in the same way as orsimilar to the second-layer wiring M2 of FIGS. 26, 27 and also of FIGS.30, 31 with respect, for example, to the shape, size and positionalrelationship of wiring pattern. Moreover, there is a region wherealthough the second-layer wirings M2 provided beneath the pads PD differfrom one another with respect to the shape, size and positionalrelationship of wiring pattern, a slit SL or a dummy wiring is formed sothat the occupation rates (wiring occupation rates) of the second-layerwirings M2 within the region of a plurality of pads PD13 to PD18 areequal to one another. It will be noted that the second-layer wirings M2within the pad PD region may include, aside from the second-layerwirings M2 necessary for constituting the integrated circuit of thesemiconductor chip, second-layer wirings M2 for dummy (which may includenot only the cases where all the wirings serve for dummy and are in afloating condition, but also the cases where part of the wirings forintegrated circuit is used as a dummy) which are provided from thestandpoint of not requiring the constitution of the integrated circuit,but ensuring equal occupation rates within the pad region.

Next, the first-layer wirings serving as an underlying layer of the padsPD13 to PD18 are illustrated with reference to FIGS. 32 to 37. Thefirst-layer wirings M1 beneath the pads PD13 to PD18 are formed in thesame way as or similar to the first-layer wiring M1 of FIGS. 32, 33 andalso of FIGS. 36, 37 with respect, for example, to the shape, size andpositional relationship of wiring pattern. Moreover, there is a regionwhere although they differ from one another with respect to the shape,size and positional relationship of wiring pattern, a slit SL or a dummywiring is formed so that the occupation rates (wiring occupation rates)of the first-layer wirings M1 within the region of a plurality of padsPD13 to PD18 are equal to one another. It will be noted that thefirst-layer wirings M1 within the pad PD region may include, aside fromthe first-layer wirings M1 necessary for constituting the integratedcircuit of the semiconductor chip, first-layer wirings M2 for dummy(which may include not only the cases where all the wirings serve fordummy and are in a floating condition, but also the cases where part ofthe wirings for integrated circuit is used as a dummy) which areprovided from the standpoint of not requiring the constitution of theintegrated circuit, but ensuring equal occupation rates within the padregion

In this way, according to this embodiment, the occupation rates of thewirings within the pad PD region are made uniform in every wiring layer(e.g. each of the first and second wiring layers herein) of all thewiring layers provided below the pads. Thus, the height at the uppersurfaces of the plural pads PD within the main surface of thesemiconductor chip 1C can be made substantially uniform. This reflectson a substantially uniform level with respect to the height at the topsof the bumps bonded to the respective pads PD. Since the flatness overthe upper surfaces of the respective pads PD can be improved, theflatness at the tops of the bumps bonded thereto can also be improved.This ensures good connection between the plural pads of thesemiconductor chip 1C and a plurality of wirings of a packaging body forpackaging the semiconductor chip 1C via bumps without inviting anyinconvenience.

Next, the state of the main surface of the substrate 1S serving as anunderlying layer of the pads PD13 to PD18 is illustrated with referenceto FIGS. 38 to 43. In the embodiment, active regions La, Lb are providedfor the underlying layers of all the pads PD of the semiconductor chip1C. The active region is one which is defined as the isolation portion 2for forming an element region in the main surface of the substrate 18.Although provision of an active region below a dummy pad is not usuallyrequired, the active region Lb is provided below the dummy pads (i.e.the pad PD16, etc.) in order to make a uniform height at the uppersurfaces of the plural pads PD within the main surface of thesemiconductor chip, or the height at the tops of the plural bumps. Thearrangement the active regions as an underlying layer for all the padsincluding the dummy pads allows the flatness and height at the uppersurface of the underlying insulating film to be made uniform. Moreparticularly, the state of the underlying layers for the plural pads PDcan be made more uniform, thus leading to more uniform height andflatness at the upper surfaces of the plural pads PD. This results inmore uniform height and flatness at the tops of the bumps bonded to therespective pads PD.

Next, the sectional structure of the semiconductor device is illustratedwith reference to FIGS. 44 and 45. The substrate 1S is made, forexample, of a p-type silicon (Si) single crystal. The isolation portion2 is formed at a device-forming surface of the main surface to definethe active region La and the dummy active region Lb. The isolationportion 2 is made, for example, of a silicon oxide (SiO₂) film formedaccording to a LOCOS (local oxidation of silicon) technique. It will benoted that the isolation portion 2 may be formed as an isolation portion2 of a groove type (SGI (shallow groove isolation) or STI (shallowtrench isolation)).

The active region La surrounded with the isolation portion 2 of thesubstrate 1S serving as an underlying layer of the pad PD14 shown inFIG. 44 is formed, for example, with a p-n junction diode D thereon.This p-n junction diode D is, for example, a protective diode forpreventing electrostatic breakdown and is formed with a p-n junctionbetween p-well PWL of the substrate 1S and an n-type semiconductorregion 8 formed thereabove. The substrate 1S has an insulating film IS1,made, for example, of a silicon oxide film, formed on the main surfacethereof. A first-layer wiring M1 is further formed thereon. Thefirst-layer wiring M1 is formed, for example, by depositing, in theorder from a lower layer, titanium (Ti), titanium nitride (TiN),aluminium (or an aluminium alloy), and titanium nitride (TiN). The filmof aluminium or an aluminium alloy is a main material for wiring and isformed as being thickest. The lower layers of titanium and titaniumnitride relative to the main wiring material layer are kinds offunctional films having the barrier function of suppressing thealuminium from moving toward the substrate 1S or, on the contrary, thesilicon of the substrate 1S from moving toward the wiring side, thefunction of improving adhesion between the insulating film IS1 and thefirst-layer wiring M1, and the function of suppression or preventing thebreaking failure of wirings owing to the electronic migration or stressmigration. The upper layer of titanium nitride relative to the mainwiring material layer is a functional film which has, aside from theabove-mentioned functions, a function as an antireflecting film ofsuppressing or preventing halation upon exposure. The first-layer wiringM1 is connected with the n-type semiconductor region 8, i.e. the p-njunction diode D1, through a plurality of contact holes CNT of acircular form in plane form in the insulating film IS1. The first-layerwiring M1 is covered with an insulating film IS2 made, for example, of asilicon oxide film. According to this embodiment, the insulating filmIS2 within the plural pad regions has an upper surface formed as uniformwith respect to the height thereof. The insulating film IS2 within theplural pad regions has high flatness at the upper surface thereof. Thisinsulating film IS2 is formed thereon with a second-layer wiring M2. Thematerial of the second-layer wiring M2 is same as that of thefirst-layer wiring M1. The second-layer wiring M2 is electricallyconnected with the first-layer wiring M1 through a plurality ofthrough-holes TH1 of a circular form in plane formed in the insulatingfilm IS2. The second-layer wiring M2 is covered with an insulating filmIS2 made, for example, of a silicon oxide film. In this embodiment, theinsulating film IS3 within the plural pad regions has an upper surfaceformed as uniform with respect to the height thereof. The insulatingfilm IS3 within the plural pad regions has an upper surface whoseflatness is high. The insulating film IS3 is covered thereon with athird-layer wiring M3. The third-layer wiring M3 is electricallyconnected with the second-layer wiring M2 through a plurality ofthrough-holes TH2 of a circular form in plane formed in the insulatingfilm IS3. Moreover, the third-layer wiring M3 is covered substantiallywith an insulating film IS4 for surface protection except that part ofthe third-layer wiring M3 is exposed to from an opening 9 of arectangular form in plane formed at part of the insulating film IS4. Theportion of the third-layer wiring M3 exposed from the opening 9 servesas a pad PD14 (PD). In this embodiment, the insulating films IS2, IS3within the plural pad regions, respectively, have an upper surfaceformed as uniform with respect to the height thereof. Thus, the heightat the upper surface of the pad PD is formed as uniform. The insulatingfilm IS4 for surface protection is made, for example, of a single filmof a silicon oxide film, a built-up film having a structure wherein asilicon nitride film is superposed on a silicon oxide film, or abuilt-up film having a structure wherein a silicon nitride film and apolyimide film are built-up on a silicon nitride film in this order. Thepad PD14 (PD) is bonded to a bump 11 via an underlying metal film 10through the opening 9. The underlying metal film 10 has not only thefunction of improving the bonding between the bump 11 and the pad PD orthe insulating film IS4, but also the barrier function of suppressing orpreventing the metal element of the bump 11 from moving toward thethird-layer wiring M3 or, on the contrary, the metal element of thethird-layer wiring M3 from moving toward the bump 11. The underlyingmetal film is made, for example, of a single film of a high meltingmetal such as titanium (Ti), titanium tungsten (TW) or the like, or abuilt-up film having a structure wherein a nickel (Ni) film and a gold(Au) film are built-up on a titanium film in this order. The planar sizeof the underlying metal film 10 is slightly larger than the opening 9 ofthe pad PD 14 (PD) and is substantially the same as that of the bump 11,and is, for example, at about 40 μm×70 μm. The bump 11 is made, forexample, of gold (Au) and is formed, for example, by plating. For thematerial of the bump 11, a lead (Pb)-tin (Sn) solder may also be used,for example.

On the other hand, such an active region Lb as set out hereinabove isformed in the underlying substrate 1S of the dummy pad PD16 shown inFIG. 45. This active region Lb has no element formed therein. As amatter of course, a diode or other element may be formed, or a p-well oran n-well may be formed, like other pads. The second-layer M2 and thefirst-layer wiring M1, which are, respectively, an underlying layer ofthe dummy pad PF16, are electrically connected to each other through aplurality of through-holes TH11. Since the pad PD16 is a dummy pad, itis not necessary to electrically connect the underlying layers of thesecond-layer wiring M2 and the first-layer wiring M1. Especially, withthe first-layer wiring M1, a plurality of through-holes TH1 are providedin the underlying layer of the pad PD16 so as to provide the samestructure as with the underlying layers of other pads PD. This enablesthe upper surface of the dummy pad PF16 to have a height further closeto the height at the upper surfaces of other pads PD. More particularly,the height at the top of the bump 11 bonded to the dummy pad PD16 can bemade more closely to the height at the tops of the bumps 11 bonded toother pads PD.

Next, an example of a manufacturing procedure of the semiconductordevice illustrated hereinabove is described. The isolation portion 2 isformed in the main surface of the substrate 1S constituting a waferwhich is substantially circular in plane, for example, by a LOCOStechnique, thereby forming the active regions La, Lb. Thereafter, anelement is formed in the active region La surrounded by the isolationportion 2. No element is formed in the active region Lb below the dummypad PD16. Subsequently, the insulating film IS1 is deposited over themain surface of the substrate 1S by a CVD (chemical vapor deposition)method, followed by forming contact holes CNT of a circular form inplane at given portions of the insulating film IS1 according tophotolithographic and dry etching techniques. Thereafter, a titaniumnitride film, a titanium film, an aluminium film and a titanium nitridefilm are, for example, deposited on the insulating film IS1 in thisorder by a sputtering method or the like. The thus deposited metal filmis subjected to patterning by photolithographic and dry etchingtechniques to form the first-layer wiring M1. Next, the insulating filmIS2 is deposited on the insulating film IS1 in a similar way, and thethrough-holes TH1 are formed in the insulating film IS2, followed byforming the second-layer wiring M2 on the insulating film IS2, like thefirst-layer insulating M1. The insulating film IS3 is likewise depositedover the insulating film IS2 and the through-holes TH2 are formed in theinsulating film IS3, followed by forming the third-layer wiring M3 onthe insulating film IS3, like the first-layer wiring M1. In order thatthe occupation rates of the respective wirings are made uniform asstated hereinbefore, these wiring layers are appropriately provided withthe slits SL (not shown). For instance, after formation of thefirst-wiring layer M1, grooves are formed in the first wiring layer M1by patterning with photolithographic and dry etching techniques.Thereafter, the insulating film IS2 is buried in the grooves by the stepof depositing the insulting film IS2 to form the slits SL. In case wherethe slit SL is, respectively, formed in other wiring layers includingthe second wiring layer M2 and the third wiring layer M3, a similarprocedure can be used. Thereafter, after deposition of the insulatingfilm IS4 for surface protection on the insulating film 153, the opening9 is formed in the insulating film IS4 so that part of the third-layerwiring is exposed, thereby forming the pad PD. Next, a single film of ahigh melting metal film such as, for example, titanium, titaniumtungsten or the like, or a conductive film of a built-up film havingstructure wherein a nickel film and a gold film are built up on atitanium film in this order is deposited by a sputtering method or thelike, followed by forming a photoresist pattern in such a way as toexpose a bump-forming region and cover the other regions therewith. Thebump 11 made, for example, of gold is formed by plating or the like,followed by removing the photoresist pattern and further the underlyingconductive film by etching, thereby forming the underlying metal film10. In this manner, a semiconductor device having the bumps 11 on therespective pads is fabricated. In the course of such fabrication of thesemiconductor device, the upper surfaces of the insulating films IS1 toIS3 are flattened according to an etch back method for a chemicalmechanical polishing (CMP) method, thereby permitting the upper surfacelevels of a plurality of pads Pd within the main surface of thesemiconductor chip 1C, i.e. the top levels of the bumps, to be made moreuniform. Additionally, the flatness at the upper surfaces of therespective pads PD can be improved. In case where the etch back methodis adopted, for example, the insulating film IS1 is deposited and itsupper surface is etched back. Thereafter, the insulating film IS2 isdeposited thereon, with its upper surface being further etched back. Inthis way, it is preferred that etching back is performed on each of theinsulating films IS1 to IS3 by an anisotropic dry etching technique. Onthe other hand, where the CMP method is adopted, good results areobtained by performing CMP only on the upper surface of the underlyinginsulating film IS3 alone where the pad PD is formed, although each ofthe insulating films IS1 to IS3 may be subjected to CMP. Moreparticularly, the uniformity of the height or level at the top of thebumps 11 can be enhanced by subjecting the respective insulating filmsIS1 to IS3 to etching-back or CMP, or by subjecting the insulating filmIS3 alone to CMP at the upper surface thereof.

Next, FIG. 46 shows occupation rates of individual wiring layers belowthe pads PD of the semiconductor device of this embodiment shown in FIG.25. FIG. 47 is a bar graph showing the occupation rates of thefirst-layer wiring of FIG. 46. FIG. 48 is a bar graph showing theoccupation rates of the second-layer wiring of FIG. 46. The occupationrates of the wirings below the pads PD for the respective wiring layersare so controlled as to be substantially equal to one another. Thevariation (4σ) of the height at the tops of the bumps 11 within a mainsurface of the semiconductor chip prior to an improvement made by theinvention or in prior art, is, for example, at about 1.5 μm on lotaverage. In contrast, according to this embodiment, the variation (4σ)of the height at the tops of the bumps 11 within a main surface of thesemiconductor chip is, for example, at about 0.85 μm on lot average, sothat we could meet our requirement of 4σ<1.0 μm. The peak-to-valleydifference (i.e. a difference between the highest and the lowest levels)of the pads PD within the main surface of the semiconductor chip 1C hasbeen found to be, for example, at 0.3 μm. Likewise, the peak-to-valleydifference of the bumps within the main surface of the semiconductorchip 1C has been found to be, for example, at 3.0 μm. According to ourstudies, it is preferred that the variation of the area occupation rateof wirings below the pads PD is within 10%, more preferably within 5%.In this time, variation in the occupation rate of wirings below the padsPD is about 3%. It is also preferred that the area occupation rate ofwirings below the pads PD is 50% or over. When the above-stated CMPtreatment is carried out, the variation (4σ) of the height at the topsof the bumps within the main surface of the semiconductor chip 1C is,for example, at 0.78 μm on lot average, and

the peak-to-valley difference of the bumps 11 is, for example, at 2.3μm. It will be noted that the value of 4σ means a value showing avariation of the bump height or level which is obtained by calculatingthrough statistic processing of bump heights at several to several tensof portions (e.g. 60 portions) within the main surface of thesemiconductor chip. The bump height used herein means a distance from agiven reference position to the top of the bump 11. The given referenceposition used herein is determined as an upper surface of the insulatingfilm IS4 for surface protection, and may be determined at the mainsurface of the substrate IS.

Next, an instance of LCD assembling the semiconductor device of theembodiment is described. FIG. 49 is a plan view of an essential part ofLCD 14, FIG. 50 is a sectional view of the essential part of FIG. 49,FIG. 51 is an enlarged, sectional view of the essential Part of FIG. 50,and FIG. 52 is an enlarged, sectional view of FIG. 51. LCD 15 has aliquid crystal panel, a semiconductor chip 1C for LCD drive, and a backlight. The liquid crystal panel 16 has two glass substrates 16 a, 16 bof a rectangular form in plane, a seal member 16 c provided between thetwo glass substrates 16 a, 16 b at the peripheral portions thereof, aliquid crystal material 16 d sealed between the two glass substrates 16a, 16 b, and a polarizer plate attached at the back side of the frontsurface of the liquid crystal panel 16. LCD 15 includes an active typeusing a thin film transistor (TFT) and a passive type using a simplematrix liquid crystal (super twisted nematic). With the active type, anarray of pixels which indicate a minimum unit for displaying a letter orpicture on a screen, and wirings 17, such as a gate wiring and a sourcewiring, for driving the pixels are formed. In this case, each of aplurality of pixels has TFT and a capacitor. With the active type, acolor filter is formed at the glass substrate 16 b. In this case,alkali-free glass is used, for example, as a material of the glasssubstrates 16 a, 16 b. On the other hand, with passive type, the glasssubstrates 16 a, 16 b are, respectively, formed thereon with wirings 17extending along mutually intersecting directions. A phase differenceplate is provides, aside from the polarizer plate. In this case, sodalime or low alkali glass is used, for example, as a material for theglass substrates 16 a, 16 b. With either the active type or the passivetype, a transparent conductive film (ITO: indium tin oxide film) made ofindium and tin oxides is used, for example, as the wiring 17. In eithercase, the semiconductor chip 1C is connected to the glass substrate 16a, for example, through an anisotropic conductive film (ACF) 18 in sucha state that the surface (i.e. the surface on which the wirings 17 areformed) on which the bumps 11 are formed is directed toward the mainsurface of the glass substrate 16 a (i.e. COG: chip on glass). Theanisotropic conductive film 18 is made of an electric connectionmaterial, which is made, for example, by dispersing or orientingconductive particles 18 b, such as carbon black, nickel fine particlesor ball solder, in an insulating bonding agent made of a thermosettingresin such as an epoxy resin. The bumps 11 of the semiconductor chip 1Cand the wirings 17 of the glass substrate 16 a are electricallyconnected with one another by means of the conductive particles 18 binterposed therebetwen in a crushed condition. An anisotropic conductivepaste (ACP) may be used in place of the ACF. The wirings at the outerperiphery of the glass substrate 16 a is electrically connected with aprinted board 20 through a flexible substrate 19. The flexible substrate19 includes a substrate body 19 a made, for example, of a polyimideresin or the like and a wiring 19 b bonded to the surface of the bodyand mainly composed of copper (Cu). The wiring 19 b of the flexiblesubstrate 19 is electrically connected to the wiring 17 of the glasssubstrate 16 a at one end thereof through the anisotropic conductivefilm 18 in the same manner as with the semiconductor chip 1C. On theother hand, the other end of the wiring 19 b is electrically connectedto the wiring of the printed board 20 by means of a solder 21 or thelike. The printed board 20 mounts thereon a semiconductor chip forcontrol circuit for controlling the operation of a LCD driver circuit ofthe semiconductor chip 1C, or the like electronic parts.

The semiconductor chip 1C is packaged on the glass substrate 16 a in thefollowing way. Initially, the anisotropic conductive film 18 is attachedto the glass substrate 16 a, after which the bump 11-forming surface ofthe semiconductor chip 1C is placed in face-to-face relation with theglass substrate 16 a and the bumps 11 are placed in registration withcorresponding wirings 17. Subsequently, the bump 11 of the semiconductorchip 1C is pressed against the wiring 17 through the anisotropicconductive film 18 at a given compression pressure, followed by keepingheating conditions for several tens of seconds to integrally connect aplurality of bumps 11 and a plurality of wirings 17 under compressedconditions. In the course of the heating and compressing steps, abonding agent is melted and caused to flow, so that the space betweenthe semiconductor chip 1C and the glass substrate 16 a is filledtherewith thereby sealing the semiconductor chip 1C. The conductiveparticles 18 b in the anisotropic conductive film 18 are capturedbetween the bump 11 and the wiring 17, and the bump 11 and the wiring 17are electrically connected through the thus captured conductiveparticles. In place of the connection using such ACF (or ACP), aconnection procedure using NCP (non-conductive paste) may be adopted.The NCP connection is one using an insulating paste (insulating bondingagent) wherein a conductive particle-free connection structure of theACP connection is provided. With the NCP connection, the packagingprocedure per se of the semiconductor chip 1C is performed in the sameway as with the case using the ACF or ACP. In NCP, the bumps 11 and thewirings 17 are, respectively, connected through direct pressure contactor compression without connection through conductive particles as in ACPthereby fixing with an insulating bonding agent under pressure contactconditions. In the ACF, ACP or NCP, the variation in height and thesurface flatness of the bumps 11 are an important factor for obtainingstability of bonding between the bumps 1 and the wirings 17 because thecompression force and heating temperature at the time of packaging arelower than those of a system where the melting of the bumps 11 areutilized. Accordingly, the use of the embodiment of this inventionwherein the heights of the bumps 11 within the main surface of thesemiconductor chip 1C can be made uniform and high surface flatness ofthe bumps 11 can be obtained is effective in ensuring good connectionbetween the plural bumps 11 and the plural wirings 17 within the mainsurface of the semiconductor chip 1C. Especially, in NCP, since anyconductive particles do not intervene between the bumps 11 and thewirings 17, the variation in height and the flatness of the bumps 11 actgreatly on the stability of bonding between the bumps 11 and the wirings17, so that the use of this embodiment is more effective in goodconnection between the plural bumps 11 and the plural wirings 17.Accordingly, according to the embodiment, the percent assemblingdefective upon packaging the semiconductor chip 1C in LCD 15 can bereduced.

Embodiment 2

In this embodiment, the case of application, for example, to TCP (tapecarrier package) is described. FIG. 54 is an enlarged, sectional view ofan essential part at an inner lead side of TCP of FIG. 53.

TCP has a base tape (packaging or mounting body) 25, a plurality ofleads formed on the surface thereof, a semiconductor chip 1C connectedto the tips of inner leads 26 a of the leads 26 through the bumps 11, asealing portion 27 for sealing the semiconductor chip 1C, the innerleads 26 a and the like, a solder resist 28 covering part of the leads26 on the surface of the base tape 25. The base tape 25 is made, forexample, of a polyimide resin or the like. The leads 26 are each made,for example, of al alloy of copper (Cu) and tin (Sn), with its surfacebeing plated with a solder (Pb—Sn) or gold (Au). The inner leads 26 a ofthe leads 26 covered with the sealing portion 27 and outer leads 26 bexposed from the sealing portion 27 are integrally, formed. The sealingportion 27 is made, for example of an epoxy resin.

For packaging the semiconductor chip 1C on the base tape 25, thefollowing procedure is carried out. Initially, the main surface (i.e.the surface on which a plurality of bumps 11 are formed) of thesemiconductor chip 1C is faced up and placed on a bonding stage, afterwhich the bumps within the main surface of the semiconductor chip 1C andthe inner leads of the base tape 25 are registered, respectively.Subsequently, the plural inner leads 26 a are pressed against the pluralbumps 11 by means of a bonding tool heated to a given temperature,thereby permitting the plural inner leads 26 a and the plural bumps 11are bonded under compression in block. If a solder is plated on thesurface of the inner leads 26 a, the inner leads 26 a and the bumps 11are bonded through a gold-tin eutectic alloy. If the inner leads 26 aare plated with gold on the surface thereof, the inner leads 26 a andthe bumps 11 are bonded through gold-gold bonding.

Next, FIG. 55 is a sectional view of an essential part of TCP of FIG. 53packaged with LCD 15. One of long-side leads 26 (outer lead 26 b) of TCPis electrically connected to the wiring 17 of the LCD 15 through theanisotropic conductive film 18 in the same manner as set out above. Theother long-side lead 26 of TCP (outer lead 26 b) is electricallyconnected to the wiring 29 of the printed board 20 by means of a solder21. The anisotropic conductive film 18 may be used in place of thesolder 21.

In this embodiment, the plural bumps within the main surface of thesemiconductor chip 1C become uniform with respect to the height thereof.Because the bumps 11 have high surface flatness, so that good connectionbetween the plural bumps 11 of the semiconductor chip 1C and the pluralinner leads 26 a of TCP is ensured. Thus, according to this embodiment,an assembling defective percent can be reduced when the semiconductorchip 1C is packaged on a tape carrier.

Embodiment 3

In this embodiment, application, for example, to COF (chip on film) isdescribed.

FIG. 56 is a sectional view of an essential part of a semiconductordevice of this embodiment packaged on LCD 15 by COF. A plurality ofwirings 19 b of a flexible substrate (packaging body) 19 areelectrically connected with wirings 17 of LCD 15 through the anisotropicconductive film in the same manner as set forth hereinbefore. Thewirings 19 b of the flexible substrate 19 are electrically connected tothe semiconductor chip 1C through the bumps 11. Moreover, the wirings 19b are also electrically connected with other type of electronic part 30through a solder bump 31. The electronic part 30 has a control circuitor the like for controlling the operation of the semiconductor chip 1C.The method of packaging the semiconductor chip 1C on a flexiblesubstrate 19 is carried out in the same manner as in the foregoingEmbodiment 1.

In this embodiment, the plural bumps 11 within the main surface of thesemiconductor chip 1C is made uniform with respect to the heightthereof. The respective bumps 11 have high surface flatness, so thatgood connection between the plural bumps 11 of the semiconductor chip 1Cand the plural wirings 19 b of the flexible substrate 19 is ensured.Thus, according to this embodiment, when the semiconductor chip 1C ispackaged on the flexible substrate 19, the assembling defective percentcan be reduced.

Embodiment 4

In this embodiment, application, for example, to BGA (ball grid array)is illustrated. FIG. 57 is a sectional view of a T-TF (tape-type thinfine-pitch)/BGA (CSP: chip size package), for example, of a fan-outtype. A lead 26 on a base tape 25 is electrically connected to asemiconductor chip 1C through a bump 11. In this case, the semiconductorchip 1C is formed thereon, in place of the afore-mentioned LCD drivercircuit, with a multipin circuit including a logic circuit such as, forexample, a microprocessor or the like, or ASIC (application specific IC)such as a cell base IC or a gate array. All or part of pads PD isarranged in an active region in the same manner as in the foregoingEmbodiment 1. The lead 26 is electrically connected to solder balls 32at an outer peripheral side of the semiconductor chip 1C. This solderball is connected to a solder resist 28 on the base tape 25 through anopening. In order to ensure the flatness of the solder balls, the basetape 25 is attached with stiffeners 33 by means of an adhesive 34 at theback side thereof. The stiffener 33 is made mainly of copper, forexample, and a material for the stiffener is so selected that adifference in coefficient of thermal expansion relative to a packagingsubstrate becomes small, which in turn reflects on a small stress on thesolder balls after packaging on the packaging substrate. The stresscaused by the difference in thermal expansion between the semiconductorchip 1C and the packaging substrate is alleviated by means of the basetape 25. Accordingly, an underfill after packaging is unnecessary.

In this embodiment, the plural bumps 11 within the main surface of thesemiconductor chip 1C become uniform with respect to the height thereof.The surface flatness of the respective bumps 11 is high, so that goodconnection between the plural bumps of the semiconductor chip 1C and theplural leads 26 of the base tape 25 is ensured. Thus, according to thisembodiment, the assembling defective percent can be reduced.

Embodiment 5

In this embodiment, another application, for example, to BGA (ball gridarray) is illustrated. FIG. 58 is a plan view of a T-TF/BGA (CSP), forexample, of a Fan-In type, FIG. 59 is a sectional view, taken along lineX1-X1 of FIG. 58, and FIG. 60 is an, enlarged sectional view of anessential part of FIGS. 58 and 59. It will be noted that in FIG. 60, ISindicates an insulating film.

In this embodiment, a memory circuit such as DRAM (dynamic random accessmemory) or the like is formed in the main surface of the semiconductorchip 1C in place of the afore-mentioned LCD driver circuit. Pads PD arearranged along vertical direction of FIG. 58 at the center of thesemiconductor chip 1C (i.e. a so-called center pad system), and elementsand wirings constituting the peripheral circuits of DRAM are disposedwithin the active region. An elastomer (i.e. a resin having elasticity)35 is bonded on the main surface (except for pad-forming region) of thesemiconductor chip 1C by means of an adhesive 36. The base tape 25 isbonded to the elastomer 35. The solder balls 32 are electricallyconnected to the leads through through-holes formed in the base tape 25,respectively. This solder ball 32 has such a structure as to be providedonly below the main surface of the semiconductor chip 1C. Suchintervention of the elastomer between the main surface of thesemiconductor chip 1C and the base tape 25 enables one to suppressthermal stress at the foot of the solder ball 32 in case where aninexpensive glass-epoxy substrate is sued as a packaging substrate. Thelead 26 is connected with the pad PD in a condition deflectedsubstantially in S or sigmoidal form. This permits the stressconcentrated at the connection between the lead 26 and the pad PD to bemitigated. The tip of the lead 26 is plated, for example, with gold(Au). The tip of the lead 26 is directly bonded with the pad PD withouta bump. The lead 26 and the pad PD are sealed with a sealing portion 27.In this case, any underfill is not necessary after packaging.

In this embodiment, the plural pads PD within the main surface of thesemiconductor chip 1C are uniform with respect to the height thereof.Because the respective pads PD have high surface flatness, goodconnection between the plural pads PD of the semiconductor chip 1C andthe plural leads 26 of the base tape 25 is ensured. Thus, according tothis embodiment, the assembling defective percent of the semiconductordevice can be reduced.

The invention has been particularly described based on the embodimentsmade by us, and should not be construed as limiting these embodiments.Many changes and modifications may be possible without departing fromthe spirit of the invention.

For instance, although the occupation rates of wirings within padregions for all the wiring layers below the pads of the semiconductordevice are made substantially equal to one another in the foregoingembodiments, the occupation rates of wirings within pad regions for partof wiring layers may be made equal to one another.

In the foregoing embodiments, a semiconductor device having athree-layered wiring structure has been illustrated, and the inventionshould not be construed as limiting to such a device but may be appliedto a semiconductor device having a double-layered wiring structure or awiring layer having a three or more layers structure.

Moreover, illustration has been made in the foregoing embodiments withrespect to the type of semiconductor wherein bumps are bonded toelectrode pads of a semiconductor chip prior to packaging with apackaging body, to which the invention should not be construed aslimiting. For instance, the invention is applicable to a system of thetype wherein at the time when bumps are bonded to the wiring side (e.g.the tips of the leads of the base tape) of a packaging body withoutbonding to electrode pads of a semiconductor chip prior to packagingwith a packaging body and the semiconductor chip is packaged with thepackaging body, the electrode pads of the semiconductor chip and thewirings of the packaging body are bonded via bumps. In this case, likethe foregoing embodiments, the plural electrodes at the semiconductorchip side are uniform with respect to the height thereof, so that goodconnection between the plural electrode pads of the semiconductor chipand the wirings of the packaging body are ensured without suffering anyinconvenience.

In the foregoing, the invention made by us has been illustrated withregard to the cases where the invention is applied to LCD drivercircuits, microprocessors and DRAM, which are in the field of utility asviewing from the background of the invention. The invention is notlimited to these cases, but is applicable, for example, to semiconductordevices having a memory circuit such as SRAM (static random accessmemory), flash memory (EEPROM: electric erasable programmable read onlymemory) or the like, and also to semiconductor devices of a mixedloading type wherein a memory circuit and a logic circuit are providedon one substrate.

The effects obtained by typical embodiments of the invention are brieflysummarized below

The wiring occupation rates of the respective wiring layers belowplurality of electrode pads are made uniform, so that the levels orheights at the upper surfaces of a plurality of electrode pads within amain surface of a semiconductor chip can be made substantially uniform.Moreover, the shapes, sizes or intervals of the respective wiring layersbelow the electrode pads are made similar to one another, the uniformityin height at the upper surfaces of the electrode pads can be enhanced.

Active regions are arranged as an underlying layer of all the electrodepads including electrode pads for dummy, so that the flatness and heightat the upper surfaces underlying insulating films of all the electrodepads can be made uniform.

In other words, underlying structures for a plurality of electrode padsarranged within regions of the main surface of the semiconductor chipwhere elements or wirings are arranged are made uniform, under which theheight of the plural electrode pads within the main surface of thesemiconductor chip can be made substantially uniform.

Because bonding failure can be reduced between the electrode pads of thesemiconductor chip and the wiring of a packaging body for packaging thesemiconductor chip, an assembling defective percent can be reduced whenthe semiconductor chip 1C is packaged.

The greatest effect obtained by the invention is as follows.

Heights of plural electrode pads within a main surface of asemiconductor chip can be made uniform.

1-40. (canceled)
 41. A method for manufacturing a semiconductor device,comprising: (a) forming a first wiring and a first dummy wiring over asemiconductor substrate; (b) forming a first insulating film over thefirst wiring and the dummy wiring; (c) forming a pad over the firstinsulating film; (d) forming a second insulating film over the pad, thesecond insulating film having an opening portion; and (e) forming a bumpover the pad and the second insulating film, the bump being connected tothe pad via the opening portion, wherein the first dummy wiring is in afloating state, wherein, in a plan view, the first wiring is formedunder the pad and is formed under the bump, wherein, in a plan view, thefirst dummy wiring is not formed under the pad and is arranged in avicinity of an outer periphery of the pad, wherein a flat area of thebump is larger than a flat area of the pad, and wherein the bump extendsto the vicinity of the outer periphery of the pad in a plan view.
 42. Amethod for manufacturing a semiconductor device according to claim 41,wherein the first dummy wiring is formed on a same level as the firstwiring.
 43. A method for manufacturing a semiconductor device accordingto claim 41, wherein an isolation portion is formed over thesemiconductor substrate, wherein a semiconductor region is formed in thesemiconductor substrate, the semiconductor region being surrounded bythe isolation portion, and wherein the bump is formed over thesemiconductor region in a plan view.
 44. A method for manufacturing asemiconductor device according to claim 43, wherein the pad is formedover the semiconductor region, in a plan view.
 45. A method formanufacturing a semiconductor device according to claim 43, wherein thesemiconductor region is a protective element for preventingelectrostatic breakdown.
 46. A method for manufacturing a semiconductordevice according to claim 41, wherein the semiconductor device has acircuit for driving a liquid crystal display.
 47. A method formanufacturing a semiconductor device according to claim 41, wherein asecond wiring is formed over the semiconductor substrate, wherein asecond dummy wiring is formed on a same level as the second wiring,wherein the first wiring and the first dummy wiring are formed over thesecond wiring and the second dummy wiring, wherein the second dummywiring is in a floating state, wherein, in a plan view, the secondwiring is formed under the pad and is formed under the bump, andwherein, in a plan view, the second dummy wiring is not formed under thepad and is arranged in the vicinity of an outer periphery of the pad.48. A method for manufacturing a semiconductor device according to claim47, wherein the pad is electrically connected to the first wiring andthe second wiring.
 49. A method for manufacturing a semiconductordevice, comprising: (a) forming a plurality of first wirings and firstdummy wirings over a semiconductor substrate; (b) forming a firstinsulating film over the first wirings and the dummy wirings; (c)forming a plurality of pads over the first insulating film; (d) forminga second insulating film over the pads, the second insulating filmhaving opening portions; and (e) forming a plurality of bumps over thepads and over the second insulating film, each of the bumps beingconnected to a respective one of the pads via a respective one of theopening portions, wherein the first dummy wirings are in a floatingstate, wherein, in a plan view, each of the first wirings is formedunder a respective one of the pads and is formed under a respective oneof the bumps, wherein, in a plan view, each of the first dummy wiringsis not formed under the pads and is arranged in a vicinity of an outerperiphery of each of the pads, wherein a flat area of each of the bumpsis larger than a flat area of each of the pads, and wherein each of thebumps extends to the vicinity of the outer periphery of each of the padsin a plan view.
 50. A method for manufacturing a semiconductor deviceaccording to claim 49, wherein the first dummy wirings are formed on asame level as the first wirings.
 51. A method for manufacturing asemiconductor device according to claim 49, wherein an isolation portionis formed over the semiconductor substrate, wherein a plurality ofsemiconductor regions are formed in the semiconductor substrate, thesemiconductor regions being surrounded by the isolation portion, andwherein each of the bumps is formed over a respective one of thesemiconductor regions in a plan view.
 52. A method for manufacturing asemiconductor device according to claim 51, wherein each of the pads isformed over a respective one of the semiconductor regions, in a planview.
 53. A method for manufacturing a semiconductor device according toclaim 51, wherein each of the semiconductor regions is a protectiveelement for preventing electrostatic breakdown.
 54. A method formanufacturing a semiconductor device according to claim 49, wherein thesemiconductor device has a circuit for driving a liquid crystal display.55. A method for manufacturing a semiconductor device according to claim49, wherein a plurality of second wirings are formed over thesemiconductor substrate, wherein a plurality of second dummy wirings areformed on a same level as the second wirings, wherein the first wiringsand the first dummy wirings are formed over the second wirings and thesecond dummy wirings, wherein the second dummy wirings are in a floatingstate, wherein, in a plan view, each of the second wirings is formedunder a respective one of the pads and is formed under a respective oneof the bumps, and wherein, in a plan view, each of the second dummywirings is not formed under the pads and is arranged in the vicinity ofan outer periphery of each of the pads.
 56. A method for manufacturing asemiconductor device according to claim 55, wherein each of the pads iselectrically connected to the first wirings and the second wirings. 57.A method for manufacturing a semiconductor device according to claim 55,wherein the semiconductor substrate is of a rectangular shape having afirst long side, a second long side, a first short side and a secondshort side, and wherein each of the bumps is arranged along the firstlong side of the semiconductor substrate.